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| MMDT3904 Datasheet, PDF (1/1 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Product specification
SOT-363 Plastic-Encapsulate Transistors
MMDT3904 DUAL TRANSISTORï¼NPNï¼
FEATURES
z Epitaxial planar die construction
z Ideal for low power amplification and switching
MARKING:K6N
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
40
5
0.2
0.2
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
Test conditions
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=10μA,IC=0
ICBO
VCB=30V,IE=0
IEBO
ICEX
hFE(1)
VEB=5V,IC=0
VCE=30V,VBE(off)=3V
VCE=1V,IC=0.1mA
hFE(2) VCE=1V,IC=1mA
hFE(3) VCE=1V,IC=10mA
hFE(4) VCE=1V,IC=50mA
hFE(5) VCE=1V,IC=100mA
VCE(sat)1 IC=10mA,IB=1mA
VCE(sat)2 IC=50mA,IB=5mA
VBE(sat)1 IC=10mA,IB=1mA
VBE(sat)2 IC=50mA,IB=5mA
fT
VCE=20V,IC=10mA,f=100MHz
Cob
VCB=5V,IE=0,f=1MHz
NF
VCE=5V,Ic=0.1mA,f=1kHz,RS=1Kâ¦
td
VCC=3V, VBE(off)=-0.5V
tr
IC=10mA , IB1=-IB2= 1mA
ts
VCC=3V, IC=10mA
tf
IB1=-IB2=1mA
SSOTS-3S63S
1
Min
60
40
5
40
70
100
60
30
0.65
300
Typ Max Unit
V
V
V
0.05 μA
0.05 μA
0.05 μA
300
0.2
0.3
0.85
0.95
4
5
35
35
200
50
V
V
V
V
MHz
pF
dB
nS
nS
nS
nS
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