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| MMDT2907A Datasheet, PDF (1/1 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Product specification
SOT-363 Plastic-Encapsulate Transistors
MMDT2907A TRANSISTOR (PNP)
SOT-363
FEATURE
Complementary NPN Type available MMDT2222A
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current -Continuous
PC Collector Power Dissipation
TJ
Junction Temperature
Tstg Storage Temperature
MARKING: K2F
Value
-60
-60
-5
-600
200
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
td
tr
ts
tf
Test conditions
IC= -10μA, IE=0
IC= -10mA, IB=0
IE=-10μA, IC=0
VCB=-50V, IE=0
VCE=-30V,VEB(off)=-0.5V
VEB=-5V, IC=0
VCE=-10V, IC= -0.1mA
VCE=-10V, IC= -1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC= -150mA
VCE=-10V, IC=-500mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=- 50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB= -50mA
VCE=-20V, IC= -50mA,f=100MHz
VCB=-10V, IE= 0,f=1MHz
VEB=-2V, IC= 0,f=1MHz
VCC=-30V,IC=-150mA, IB1=-15mA
VCC=-6V, IC=-150mA,
IB1= IB2= -15mA
1
Min Max Unit
-60
V
-60
V
-5
V
-10
nA
-50
nA
-10
nA
75
100
100
100 300
50
-0.4
V
-1.6
V
-1.3
V
-2.6
V
200
MHz
8
pF
30
pF
10
nS
40
nS
225
nS
60
nS
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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