 English |
|
|
|
|
|
|
|
| MMBTSA1015 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor | |||
| |||
|
for switching and AF amplifier applications.
Product specification
MMBTSA1015
The transistor is subdivided into three groups O, Y
and G, according to its DC current gain. As
complementary type the NPN transistor
MMBTSC1815 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
-VCBO
50
V
-VCEO
50
V
-VEBO
5
V
-IC
150
mA
-IB
50
mA
Ptot
200
mW
Tj
150
OC
TS
- 65 to +150
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at -VCE = 6 V, -IC = 2 mA
Current Gain Group O
hFE
70
Y
hFE
120
G
hFE
200
at -VCE = 6 V, -IC = 150 mA
hFE
25
Collector Base Cutoff Current
at -VCB = 50 V
-ICBO
-
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
Collector Base Breakdown Voltage
at -IC =100 µA
-V(BR)CBO
50
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
50
Emitter Base Breakdown Voltage
at -IE = 10 µA
-V(BR)EBO
5
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
-VCE(sat)
-
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
-VBE(sat)
-
Gain Bandwidth Product
at -VCE = 10 V, -IC = 1 mA
fT
80
Output Capacitance
at -VCB = 10 V, f = 1 MHz
COB
-
Max.
140
240
400
-
0.1
0.1
-
-
-
0.3
1.1
-
7
Unit
-
-
-
-
µA
µA
V
V
V
V
V
MHz
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese