MMBTH10 Datasheet, PDF (1/1 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR

SMD Type
■ Features
● High Current Gain Bandwidth Product
● Ideal for Mixer and RF Amplifier Applications
TransistIoCrs
Product specification
MMBTH10
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient (Note 1)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ
Tstg
Rating
30
25
3
50
300
417
150
-55 to 150
Unit
V
V
V
mA
mW
℃/W
℃
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base - emitter saturation voltage
Transition frequency
Symbol
Test conditons
V(BR)CBO Ic= 100 μA， IE=0
V(BR)CEO Ic= 0.1 mA， IB=0
V(BR)EBO IE= 10μA， IC=0
IcBO VCB= 25 V , IE=0
IEBO VEB= 2V , IC=0
hFE VCE= 10V, IC= 4mA
VCE(sat) IC=4 mA, IB= 5mA
VBE(sat) IC= 50 mA, IB= 0.4mA
fT VCE= 10V, IC= 4mA,f=100MHz
■ Marking
Marking
3EM
Min Typ Max Unit
30
V
25
V
3
V
0.1 μA
0.1 μA
60
0.4 V
0.5 V
650
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
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