MMBTA70 Datasheet, PDF (1/1 Pages) Samsung semiconductor – PNP (AMPLIFIER TRANSISTOR)

Product specification
MMBTA70
Features
General Purpose Transistor
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector current
Total Device Dissipation FR-5 Board
(* 1) @TA = 25
Derate above 25
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate, (* 2)
@TA = 25
Derate above 25
Thermal Resistance, Junction-to-Ambient
Junction temperature
Storage temperature
* 1. FR-5 = 1.0 × 0.75 × 0.062 in.
* 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
Symbol
VCEO
VEBO
IC
PD
RèJA
PD
RèJA
Tj
Tstg
Rating
-40
-4
-100
225
1.8
556
300
2.4
417
150
-55 to +150
Unit
V
V
mA
mW
mW/
/W
mW
mW/
/W
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Current-gain-bandwidth product
Output capacitance
Symbol
Testconditons
Min
V(BR)CEO IC = -1.0 mA, IB = 0
-40
V(BR)EBO IE = -100 ìA, IC = 0
-4.0
ICBO VCB = -30 V, IE = 0
HFE IC = -5.0 mA, VCE = -10 V
40
VCE(sat) IC = -10 mA, IB = -1.0 mA
fT
IC = -5.0 mA, VCE = -10 V, f = 100 MHz 125
Cobo VCB = -10 V, IE = 0, f = 1.0 MHz
Typ Max Unit
V
V
-100 nA
400
-0.25 V
MHz
4.0 pF
Marking
Marking
M2C
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