MMBTA64 Datasheet, PDF (1/1 Pages) Samsung semiconductor – PNP (DARLINGTON TRANSISTOR)

Product specification
SOT-23 Plastic-Encapsulate Transistors
MMBTA64 TRANSISTOR (PNP)
SOT–23
FEATURES
 For Applications Requiring High Current Gain
MARKING:2V
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-30
VCEO Collector-Emitter Voltage
-30
VEBO Emitter-Base Voltage
-10
IC
Collector Current
-800
PC
Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA, IE=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-10
V
Collector cut-off current
ICBO
VCB=-30V, IE=0
-0.1
µA
Emitter cut-off current
IEBO
VEB=-10V, IC=0
-0.1
µA
DC current gain
hFE(1) *
VCE=-5V, IC=-10mA
10
K
hFE(2) *
VCE=-5V, IC=-100mA
20
K
Collector-emitter saturation voltage
VCE(sat) *
IC=-100mA, IB=-0.1mA
-1.5
V
Base-emitter voltage
VBE*
VCE=-5V, IC=-100mA
-2
V
Transition frequency
VCE=-5V,IC=-10mA,
fT
125
f=100MHz
MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
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