MMBTA20 Datasheet, PDF (1/1 Pages) Samsung semiconductor – NPN (GENERAL POUPOSE TRANSISTOR)

Product specification
MMBTA20
Features
General Purpose Amplifier.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector current
Total Device Dissipation FR-5 Board
(* 1) @TA = 25
Derate above 25
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate, (* 2)
@TA = 25
Derate above 25
Thermal Resistance, Junction-to-Ambient
Junction temperature
Storage temperature
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Symbol
VCEO
VEBO
IC
PD
RèJA
PD
RèJA
Tj
Tstg
Rating
40
4
100
225
1.8
556
300
2.4
417
150
-55 to +150
Unit
V
V
mA
mW
mW/
/W
mW
mW/
/W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Current-gain-bandwidth product
Output capacitance
Marking
Marking
1C
Symbol
Testconditons
V(BR)CEO IC = 1.0 mA, IB = 0
V(BR)EBO IE = 10 ìA, IC = 0
ICBO VCB = 30 V, IE = 0
HFE IC = 5.0 mA, VCE = 10 V
VCE(sat) IC = 10 mA, IB = 1.0 mA
fT
IC = 5.0 mA, VCE = 10 V, f = 100 MHz
Cobo VCB = 5.0 V, IE = 0, f = 1.0 MHz
Min Typ Max Unit
40
V
4.0
V
100 nA
40
400
0.25 V
125
MHz
4.0 pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1