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| MMBT9014 Datasheet, PDF (1/1 Pages) Unisonic Technologies – PRE-AMPLIFIER, LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR | |||
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SMD Type
for switching and AF amplifier applications
As complementary types the PNP
transistor MMBT9015 is recommended.
Product specification
MMBT9014
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
SOT-23 Plastic Package
Value
Unit
50
V
45
V
5
V
100
mA
200
mW
150
OC
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at VCE = 5 V, IC = 1 mA
MMBT9014B
hFE
110
MMBT9014C
hFE
200
MMBT9014D
hFE
420
Collector Cutoff Current
at VCB = 50 V
Emitter Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 5 mA
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA
Output Capacitance
at VCB = 10 V, f = 1 MHz
Noise Figure
at VCE = 5 V, IC = 200 µA, f = 1 KHz, RG = 2 Kâ¦
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
COB
NF
-
-
50
45
5
-
-
100
-
-
Max.
220
450
800
50
50
-
-
-
0.6
1
-
6
10
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
dB
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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