MMBT4403 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Product specification
MMBT4403
■ Features
● Ideal for Medium Power Amplification and Switching
● Complementary NPN Type Available (MMBT4401)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total Device Dissipation Alumina Substrate
Thermal Resistance, Junction?to?Ambient
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, Tstg
Rating
-40
-40
-5
-600
300
417
-55 to150
1.Base
2.Emitter
3.collector
Unit
V
V
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
Test conditons
V(BR)CBO IC = 100μA, IE = 0
V(BR)CEO IC = 1.0 mA, IB = 0
V(BR)EBO IE =100μA, IC = 0
ICBO VCB=-35 V, IE=0
IEBO VEB=-4V, IC=0
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transition frequency
Delay time
Rise time
Storage time
Fall time
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
hFE IC = -10 mA, VCE = -1.0 V
IC = -150 mA, VCE = -2.0 V
IC = -500 mA, VCE = -2.0 V
IC = -150 mA, IB = -15 mA
VCE(sat)
IC = -500 mA, IB = -50 mA
IC = 150 mA, IB = 15 mA
VBE(sat)
IC = 500 mA, IB = 50 mA
fT IC = 20 mA, VCE = 10 V, f = 100 MHz
td
VCC = 30 V, VEB = 2.0 V,
tr
IC = 150 mA, IB1 = 15 mA
ts
VCC = 30 V, IC = 150 mA,
tf
IB1 = IB2 = 15 mA
* Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Min Typ Max Unit
-40
V
-40
V
-5
V
-0.1 μA
-0.1 μA
30
60
100
100
300
20
-0.4
V
-0.75
-0.95
V
-1.3
200
MHz
15 ns
20 ns
225 ns
30 ns
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