MMBT3904SL Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

Product specification
SOT-923 Plastic-Encapsulate Transistors
MMBT3904SL TRANSISTOR (NPN)
FEATURES
 Complementary to MMBT3906SL
MARKING:1N
SOT–923
3
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
40
VEBO Emitter-Base Voltage
6
IC
Collector Current
200
PC
Collector Power Dissipation
100
RΘJA Thermal Resistance From Junction To Ambient
1250
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
1
2
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Collector-base breakdown voltage
V(BR)CBO IC=10µA, IE=0
60
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0
40
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
6
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO
VCB=60V, IE=0
100
ICEX
VCE=30V, VBE(off)=3.0V
50
IEBO
VEB=5V, IC=0
100
VCE=1V, IC=0.1mA
40
DC current gain
VCE=1V, IC=1mA
VCE=1V, IC=10mA
hFE
VCE=1V, IC=50mA
VCE=1V, IC=100mA
70
100
300
60
30
IC=10mA, IB=1mA
0.2
Collector-emitter saturation voltage
VCE(sat)
IC=50mA, IB=5mA
0.3
Base-emitter saturation voltage
VBE(sat)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.65
0.85
0.95
Transition frequency
fT
VCE=20V,IC=10mA , f=100MHz
300
Collector output capacitance
Cob
VCB=5V, IE=0, f=1MHz
6
Collector output capacitance
Cib
VEB=0.5V, IE=0, f=1MHz
15
Delay time
Rise time
td
35
tr
VCC=3V, IC=10mA, IB1= IB2=1mA
35
Storage time
ts
200
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
pF
ns
ns
ns
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