MMBT3904M Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR

Product specification
SOT-723 Plastic-Encapsulate Transistors
MMBT3904M TRANSISTOR (NPN)
SOT-723
FEATURE
 Complementary to MMBT3906M
 Small Package
MARKING: 1N
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
VCBO
VCEO
VEBO
IC
PC
R_ΘJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
0.2
0.1
1250
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
NF
t_d
t_r
t_s
t_f
Test conditions
IC=10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCE=30V,VEB(off)=3V
VEB=5V,IC=0
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V,IC=10mA,f=100MHz
VCB=5V,IE=0,f=1MHz
VEB=0.5V,IC=0,f=1MHz
VCE=5V,IC=0.1mA,f=1MHz,R_S=1kΩ
VCC=3V,VBE(off)=-0.5V,
IC=10mA,IB1=1mA
VCC=3V,IC=10mA
IB1=IB2=1mA
1. BASE
2. EMITTER
3. COLLECTOR
Min Typ Max
60
40
6
50
100
40
70
100
300
60
0.2
0.3
0.65
0.85
0.95
300
4
8
5
35
35
200
50
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
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