MMBT2222 Datasheet, PDF (1/1 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

Product specification
MMBT2222
■ Features
● Epitaxial planar die construction.
● Complementary PNP type available(MMBT2907)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Thermal resistance from junction to ambient
Operating and Storage and Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj, TSTG
Rating
60
30
5
600
250
500
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
Test conditions
V(BR)CBO IC = 10 μA, IE = 0
V(BR)CEO IC = 10 mA, IB = 0
V(BR)EBO IC = 10 μA, IC = 0
ICBO VCB=50V, IE=0
IEBO VEB= 3V, IC=0
VCE=10V, IC= 0.1mA
hFE VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
collector-emitter saturation voltage *
base-emitter saturation voltage *
Transition frequency
Delay time
Rise time
Storage time
Fall time
IC = 150 mA; IB = 15 mA
VCE(sat)
IC = 500 mA; IB = 50 mA
VBE(sat)
fT
td
tr
ts
tf
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 20 mA; VCE = 20 V; f = 100 MHz
VCC=30V, VBE(off)=-0.5V,
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA,IB1=-IB2=15mA
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
Marking
M1B
1.Base
2.Emitter
3.collector
Unit
V
V
V
mA
mW
℃/W
℃
Min Typ Max Unit
75
V
40
V
6
V
10 nA
100 nA
35
100
300
30
0.4 V
1.6 V
1.3 V
2.6 V
250
MHz
10 ns
25 ns
225 ns
60 ns
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