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| MJE170 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,40-80V,12.5W) | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
MJE170 TRANSISTOR (PNP)
TO â 126
FEATURES
z Low Power Audio Amplifier
z Low Current, High Speed Switching Applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-40
-7
-3
1.5
83
150
-55~+150
1. EMITTER
2. COLLECTOR
3. BASE
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=-1mA,IC=0
Collector cut-off current
ICBO
VCB=-60V,IE=0
Emitter cut-off current
IEBO
VEB=-7V,IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-500mA
hFE(3)
VCE=-1V, IC=-1.5A
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA,IB=-50mA
IC=-3A,IB=-600mA
Base-emitter saturation voltage
VBE(sat)
IC=-1.5A,IB=-150mA
IC=-3A,IB=-600mA
Base-emitter voltage
VBE
VCE=-1V, IC=-500mA
Collector output capacitance
Cob
VCB=-10V,IE=0, f=10MHz
Transition frequency
fT
VCE=-10V,IC=-100mA, f=10MHz
Min Typ Max Unit
-60
V
-40
V
-7
V
-0.1 μA
-0.1 μA
50
250
30
12
-0.3 V
-1.7 V
-1.5 V
-2
V
-1.2 V
50 pF
50
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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