MGSF3441VT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – TMOS Single P-channel Field Effect Transistors

Product specification
MGSF3441VT1
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the GreenLine™ Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature TSOP 6 Surface Mount Package Saves Board Space
1256
DRAIN
3
GATE
SOURCE
4
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 78 mΩ (TYP)
DD
S
D
DG
CASE 318G–02, Style 1
TSOP 6 PLASTIC
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
 Total Power Dissipation @ TA = 25°C Mounted on FR4 t 5 sec
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
Device
MGSF3441VT1
MGSF3441VT3
ORDERING INFORMATION
Reel Size
Tape Width
7″
8 mm embossed tape
13″
8 mm embossed tape
Quantity
3000
10,000
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
R_θJA
TL
Value
20
± 8.0
3.3
20
2.0
– 55 to 150
128
260
Unit
Vdc
Vdc
A
W
°C
°C/W
°C
http://www.twtysemi.com
[e-mail]
4008-318-123
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