MCR100-6 Datasheet, PDF (1/1 Pages) Semtech Corporation – SCR

Product specification
TO-92 Plastic-Encapsulate Thyristors
MCR100- 6,- 8 Silicon Controlled Rectifier
TO-92
MAIN FEATURES
Symbol
value
unit
V_DRM /VRRM
I_T(RMS)
MCR100-6
MCR100-8
0.8
A
400
V
600
Tj
Junction Temperature -40 ~ 125
℃
T_stg
Storage Temperature -55 ~ 150
℃
1.KATHODE
2.GATE
3.ANODE
DESCRIPTION
Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
FEATURES
z Blocking voltage to 400 V (MCR100-6)
z RMS on-state current to 0.8 A
z General purpose switching
APPLICATIONS
z General purpose switching
z Phase control applications
z Solid state relays
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
On state voltage *
Gate trigger voltage
Peak Repetitive forward and reverse
blocking voltage
MCR100-6
MCR100-8
Symbol
V_TM
V_GT
Test conditions
I_TM=1A
V_AK=7V
/ VDRM V_ARRM I_DRM/IRRM= 10 μA
Min
Max
Unit
1.7
V
0.8
V
400
V
600
Peak forward or reverse blocking
Current
I_DRM
I_RRM
V_AK= Rated
V_DRM or V_RRM
10
µA
Holding current
Gate trigger current
I_H
I_HL=20mA ,V_AK =7V
A2
A1
I_GT
A
B
V_AK=7V
5
mA
5
15
µA
15
30
µA
30
80
µA
80
200
µA
* Forward current applied for 1 ms maximum duration，duty cycle≤1%。
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