 English |
|
|
|
|
|
|
|
| MBRD10200CT Datasheet, PDF (1/2 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER | |||
| |||
|
Product specification
TO-252-2L Plastic-Encapsulate Diodes
MBRD10200CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-25522-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
VR(RMS)
IO
IFSM
Working peak reverse voltage
RMS reverse voltage
Average rectified output current
Non-repetitive peak forward surge current
8.3ms half sine wave
PD
RÎJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
200
140
10
125
1.25
80
125
-55~+150
Unit
V
V
A
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
V(BR)
IR=100μA
200
Reverse current
IR
VR=200V
Forward voltage
VF(1)
VF(2)*
IF=5A
IF=10A
Typical total capacitance
Ctot
VR=4V,f=1MHz
*Pulse test
Typ Max
50
0.92
1.1
50
Unit
V
μA
V
V
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese