MBR835 Datasheet, PDF (1/2 Pages) ON Semiconductor – Axial Lead Rectifiers

Product specification
TO-220A Plastic-Encapsulate Diodes
MBR830, 35, 40, 45, 50, 60
SCHOTTKY BARRIER RECTIFIER
TO-220A
FEATURES
 Schottky Barrier Chip
 Guard Ring Die Construction for Transient Protection
 Low Power Loss,High Efficiency
 High Surge Capability
 High Current Capability and Low Forward Voltage Drop
 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. CATHODE
2. ANODE
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
PD
RΘJA
Tj
Tstg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ Tc=125℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
MBR
830
30
21
MBR
835
35
24.5
Value
MBR MBR
840 845
40
45
28
31.5
8
150
2
50
125
-55~+150
MBR
850
50
35
MBR
860
60
42
Unit
V
V
A
A
W
℃/W
℃
℃
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2