MBR30200FCT Datasheet, PDF (1/2 Pages) Kersemi Electronic Co., Ltd. – Power Schottky Rectifier - 30Amp 200Volt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR30200FCT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-220F
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
V_RRM
Peak repetitive reverse voltage
V_RWM
Working peak reverse voltage
V_R
V_R(RMS)
DC blocking voltage
RMS reverse voltage
I_O
Average rectified output current
Non-Repetitive peak forward surge current
I_FSM
8.3ms half sine wave
P_D
Power dissipation
R_ΘJA
Thermal resistance from junction to ambient
T_j
Junction temperature
T_stg
Storage temperature
Value
200
140
30
200
2
50
125
-55~+150
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Reverse voltage
V_(BR)
I_R=1mA
200
Reverse current
I_R
V_R=200V
0.1
V_F1
I_F=15A
1
Forward voltage
V_F2*
I_F=30A
1.1
Typical total capacitance
C_tot
V_R=4V,f=1MHz
800
*Pulse test
Unit
V
V
A
A
W
℃/W
℃
℃
Unit
V
mA
V
V
pF
B,Nov,2013