MBR2545FCT Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER RECTIFIER

Product specification
TO-220F Plastic-Encapsulate Diodes
MBR2545FCT
SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss, High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
TO-220F
1.ANODE
2.CATHODE
3.ANODE
1
2
2
3
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
Value
45
32
Average Rectified Output Current (Note 1)
Tc=130℃
Peak Repetitive Reverse Surge Current (Note 3)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load
(JEDEC Method)
Forward Voltage Drop @ I_F=30A, T_C=125℃
@ I_F=30A, T_C= 25℃
Peak Reverse Current
@ T_C= 25℃
at Rated DC Blocking Voltage
@ T_C=125℃
Typical Junction Capacitance (Note 2)
I_O
I_RRM
I_FSM
V_FM
I_RM
C_T
30
1.0
150
0.73
0.82
0.2
40
750
Typical Thermal Resistance Junction to Case (Note 1)
R_θJC
1.5
Operating and Storage Temperature Range
T_j,T_STG
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3．2.0μs pulse width, f = 1.0KHz.
-55~+125
http://www.twtysemi.com
[e-mail]
4008-318-123
Unit
V
V
A
A
A
V
mA
pF
℃/W
℃
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