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MBR20200CT Datasheet, PDF (1/2 Pages) Motorola, Inc – SWITCHMODE™ Power Dual Schottky Rectifier
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR20200CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-220-3L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
VR
VR(RMS)
IO
IFSM
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
PD
RΘJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
200
140
20
150
2
50
125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
V(BR)
IR=1mA
200
Reverse current
IR
VR=200V
Forward voltage
VF1
VF2*
IF=10A
IF=20A
Typical total capacitance
Ctot
VR=5V,f=1MHz
*Pulse test
Unit
V
V
A
A
W
℃/W
℃
℃
Typ Max Unit
V
100 μA
1
V
1.2
V
500
pF
B,Nov,2013