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| MBR20150 Datasheet, PDF (1/1 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER | |||
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Product specification
TO-220A Plastic-Encapsulate Diodes
MBR20125,150,200
SCHOTTKY BARRIER RECTIFIER
TO-220A
FEATURES
ï¬ Schottky Barrier Chip
1. CATHODE
2. ANODE
ï¬ Guard Ring Die Construction for Transient Protection
ï¬ Low Power Loss,High Efficiency
ï¬ High Surge Capability
ï¬ High Current Capability and Low Forward Voltage Drop
ï¬ For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
MBR20125
Value
MBR20150
MBR20200
VRRM
VRWM
VR
VR(RMS)
IO
PD
RÎJA
Tj
Tstg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
125
87.5
150
200
105
140
20
2
50
125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min
Reverse voltage
Reverse current
Forward voltage
V(BR)
IR
VF(1)
VF(2)
MBR20125
MBR20150
MBR20200
MBR20125
MBR20150
MBR20200
MBR20125
MBR20150
MBR20200
MBR20125
MBR20150
MBR20200
IR=0.1mA
125
150
IR=1mA
200
VR=125V
VR=150V
VR=200V
IF=10A
IF=20A
Typ Max
9
0.1
0.87
0.9
1
Unit
V
V
A
W
â/W
â
â
Unit
V
μA
mA
V
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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