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| MBR20100FCT Datasheet, PDF (1/2 Pages) Sirectifier Global Corp. – Power Schottky Rectifier - 20Amp 100Volt | |||
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Product specification
TO-220F Plastic-Encapsulate Diodes
MBR20100FCT, 150FCT, 200FCT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
1. ANODE
2. CATHODE
3. ANODE
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
MBR20100FCT
Value
MBR20150FCT
MBR20200FCT
VRRM
VRWM
Peak repetitive reverse voltage
Working peak reverse voltage
100
150
200
VR
DC blocking voltage
VR(RMS) RMS reverse voltage
70
105
140
IO
Average rectified output current
20
Non-Repetitive peak forward surge current
IFSM
150
8.3ms half sine wave
PD
Power dissipation
2
RÎJA Thermal resistance from junction to ambient
50
Tj
Junction temperature
125
Tstg Storage temperature
-55~+150
Unit
V
V
A
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min Typ
MBR20100FCT
100
Reverse voltage
V(BR)
MBR20150FCT
MBR20200FCT
IR=1mA
150
200
Reverse current
MBR20100FCT
IR
MBR20150FCT
MBR20200FCT
MBR20100FCT
VR=100V
VR=150V
VR=200V
Forward voltage
VF1
MBR20150FCT
MBR20200FCT
MBR20100FCT
IF=10A
VF2*
MBR20150FCT
MBR20200FCT
IF=20A
Typical total capacitance
Ctot
MBR20100FCT
VR=4V,f=1MHz
230
MBR20150FCT- 20200FCT VR=4V,f=1MHz
100
*Pulst test
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
Max Unit
V
0.1
0.1 mA
0.1
1
1
V
1
1.2
1.2
V
1.2
pF
pF
1 of 2
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