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| MBR1090 Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier | |||
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Product specification
TO-220A Plastic-Encapsulate Diodes
MBR1060,80,90,100
SCHOTTKY BARRIER RECTIFIER
TO-220A
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. CATHODE
2. ANODE
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
MBR1060
Value
MBR1080 MBR1090
MBR10100
VRRM Peak repetitive reverse voltage
VRWM Working peak reverse voltage
60
VR DC blocking voltage
VR(RMS) RMS reverse voltage
42
IO
Average rectified output current
Non-Repetitive peak forward surge current
IFSM
8.3ms half sine wave
80
90
56
63
10
150
PD Power dissipation
2
RÎJA Thermal resistance from junction to ambient
50
Tj
Junction temperature
125
Tstg Storage temperature
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min
100
70
Typ Max
MBR1060
60
Reverse voltage
V(BR)
MBR1080
MBR1090
80
IR=1mA
90
Reverse current
Forward voltage
MBR10100
100
MBR1060
VR=60V
IR
MBR1080
VR=80V
0.1
MBR1090
VR=90V
MBR10100
VR=100V
MBR1060
0.8
VF
IF=10A
MBR1080-100
0.84
Unit
V
V
A
A
W
â/W
â
â
Unit
V
mA
V
V
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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