MBR1050CT Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Product specification
TO-220-3L Plastic-Encapsulate Diodes
MBR1030CT, 35CT, 40CT, 45CT, 50CT, 60CT
SCHOTTKY BARRIER RECTIFIER
TO-220-3L
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
V_RRM
V_RWM
V_R
V_R(RMS)
I_O
I_FSM
P_D
R_ΘJA
T_j
T_stg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ T_c=105℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
MBR
1030CT
MBR
1035CT
30
35
21
24.5
Value
MBR
MBR
1040CT 1045CT
40
45
28
31.5
10
125
2
50
125
-55~+150
MBR
1050CT
MBR _Unit
1060CT
50
60
V
35
42
V
A
A
W
℃/W
℃
℃
http://www.twtysemi.com
[e-mail]
4008-318-123
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