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| MBR10200 Datasheet, PDF (1/1 Pages) Kersemi Electronic Co., Ltd. – 10.0AMPS.Schottky Barrier Rectifiers | |||
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Product specification
TO-220A Plastic-Encapsulate Diodes
MBR10150,200
SCHOTTKY BARRIER RECTIFIER
TO-220A
FEATURES
ï¬ Schottky Barrier Chip
ï¬ Guard Ring Die Construction for Transient Protection
ï¬ Low Power Loss,High Efficiency
ï¬ High Surge Capability
ï¬ High Current Capability and Low Forward Voltage Drop
ï¬ For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. CATHODE
2. ANODE
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
PD
RÎJA
Tj
Tstg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
MBR10150
150
105
Value
MBR10200
200
140
10
150
2
50
125
-55~+150
Unit
V
V
A
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min
Reverse voltage
V(BR)
Reverse current
IR
Forward voltage
VF
Typical junction capacitance
Cj
MBR10150
MBR10200
MBR10150
MBR10200
MBR10150
MBR10200
MBR10150
MBR10200
150
IR=0.1mA
200
VR=150V
VR=200V
IF=10A
VR=4V,f=1MHz
Typ Max Unit
V
9
μA
1
V
1.05
500
pF
200
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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