MA3XD17 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Product specification
MA3XD17
Features
Mini type 3-pin package
High breakdown voltage VR = 100 V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
P aram eter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
100
V
Peak reverse voltage
IRRM
100
V
Non-repetitive peak forward surge current (Note 1)
IFSM
1.5
A
Average forward current
IF(AV)
300
mA
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to+ 150
Note
1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Reverse current (DC)
IR
VR = 100 V
Forward voltage (DC)
VF
IF = 300 mA
0.5
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
100
Reverse recovery time*
trr
IF = IR = 100 mA, Irr = 0.1IR, RL = 100
7
Note
1. This product is sensitive to electric shock (static electricity, etc.).Due attention must be paid
on the charge of a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3.* : trr measuring circuit
1.Base
2.Emitter
3.collector
Max
Unit
200
A
0.58
V
pF
ns
Marking
Marking
M5K
http://www.twtysemi.com
[e-mail]
4008-318-123
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