MA3XD14E Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon epitaxial planar type (cathode common)

Product specification
MA3XD14E
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
Features
Mini type 3-pin package
Low forward rise voltage VF (VF < 0.4 V)
Cathode common type
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
P aram eter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
20
V
Repetitive peak reverse-voltage
IRRM
20
V
Non-repetitive peak forward-surge-current (Note 2)
IFSM
1
A
Forward current (DC)
Single
IF
Double (Note 1)
100
mA
70
Peak forward current
Single
IFM
Double (Note 1)
300
mA
200
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to+ 150
Note
1 : The value for operating one chip
2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Reverse current (DC)
IR
VR = 10 V
20
Forward voltage (DC)
VF
IF = 5 mA
IF = 100 mA
0.27
0.40
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
25
Reverse recovery time*
trr
IF = IR = 100 mA, Irr = 10 mA, RL = 100
3.0
Note
1. This product is sensitive to electric shock (static electricity, etc.).Due attention must be paid
on the charge of a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring circuit
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Unit
A
V
V
pF
ns
Marking
Marking
M5H
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