MA2Z001 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For switching circuits

For switching circuits
■ Features
• High breakdown voltage: V_R = 200 V
• Small terminal capacitance C_t
• Suitable for high-density mounting
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
200
V
Repetitive peak reverse voltage V_RRM
250
V
Forward current (Average)
I_F(AV)
100
mA
Repetitive peak forward current I_FRM
225
mA
Non-repetitive peak forward
I_FSM
500
mA
surge current ^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) *: t = 1 s
Product specification
MA2Z001
1.25±0.1
0.35±0.1
Unit: mm
0.7±0.1
1
0 to 0.1
2
0.5±0.1
5˚
0.16^{+–00..016}
1 : Anode
2 : Cathode
EIAJ : SC-76
Marking Symbol: 1K
SMini2-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time ^*
V_F
I_F = 100 mA
I_R
V_R = 200 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA , R_L = 100 Ω
1.2
V
1.0
µA
3.0
pF
60
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. _*: t_rr measurement circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 1 mA
I_F = I_R = 10 mA
R_L = 100 Ω
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