MA2J728 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Schottky Barrier Diodes (SBD)

For super-high speed switching circuit
For wave detection circuit
I Features
• Sealed in the S-mini (2-pin) mold and super small type
• Low forward rise voltage (V_F) and satisfactory wave detection
efficiency (η)
• Extremely low reverse current I_R
• Small temperature coefficient of forward characteristic
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
V_R
30
V
V_RM
30
V
I_FM
150
mA
I_F
30
mA
T_j
125
°C
T_stg
−55 to +125
°C
Product specification
MA2J728
Unit : mm
K
A
2
1
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2A
I Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time^*
I_R
V_R = 30 V
V_F1
I_F = 1 mA
V_F2
I_F = 30 mA
C_t
V_R = 1 V, f = 1 MHz
t_rr
I_F = I_R = 10 mA
I_rr = 1 mA, R_L = 100 Ω
300 nA
0.4
V
1.0
V
1.5
pF
1.0
ns
Detection efficiency
η
V_in = 3 V_(peak), f = 30 MHz
R_L = 3.9 kΩ, C_L = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ɹ 2. Rated input/output frequency: 2 000 MHz
3. * : t_rr measuring instrument
Bias Applicaiton Unit N-50BU
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
W.F.Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 1 mA
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
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