MA2J11100L Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – MA2J11100L Silicon epitaxial planar type

TY epitaxial planar type
Product specification
MA2J111 (MA111)
For switching circuits
■ Features
• Allowing high-density mounting
• Short reverse recovery time t_rr
• Small terminal capacitance C_t
• High breakdown voltage: V_R = 80 V
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
80
V
Maximum peak reverse voltage V_RM
80
V
Forward current
I_F
100
mA
Peak forward current
I_FM
225
mA
Non-repetitive peak forward
I_FSM
500
mA
surge current ^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*: t = 1 s
1.25±0.1
0.35±0.1
Unit: mm
0.7±0.1
1
0 to 0.1
2
0.5±0.1
5˚
0.16^{+–00..016}
1: Anode
2: Cathode
EIAJ: SC-76
Marking Symbol: 1B
SMini2-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time ^*
V_F
I_F = 100 mA
V_R
I_R = 100 µA
I_R
V_R = 75 V
C_t
V_R = 0 V, f = 1 MHz
t_rr
I_F = 10 mA, V_R = 6 V
I_rr = 0.1 I_R , R_L = 100 Ω
0.95 1.20
V
80
V
100 nA
0.6 1.2
pF
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t_rr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 0.1 I_R
I_F = 10 mA
V_R = 6 V
R_L = 100 Ω
R_i = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
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