M7002NND03 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – WBFBP-03B Plastic-Encapsulate MOSFETS

Product specification
WBFBP-03B Plastic-Encapsulate MOSFETS
M7002NND03 MOSFET( N-Channel )
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
D
WBFBP-03B
(1.2×1.2×0.5) _TOP
unit: mm
GS
D
1. GATE
2. SOURCE
3. DRAIN
BACK
S
G
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)
Chip size: 0.388mm*0.349mm
MARKING: 72
D
72
GS
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GSS
Gate-Source Voltage - Continuous
I_D
Maximum Drain Current - Pulsed
P_D
Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
T_J
Junction Temperature
T_stg
Storage Temperature
Value
60
±20
115
150
833
150
-55~+150
Units
V
V
mA
mW
℃/W
℃
℃
http://www.twtysemi.com
[e-mail]
4008-318-123
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