LMBT5551DW1T1G Datasheet, PDF (1/2 Pages) Leshan Radio Company – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DUAL NPN SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
Product specification
LMBT5551DW1T1G
FEATURE
ƽ We declare that the material of product compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5551DW1T1G
G1
LMBT5551DW1T3G
G1
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
V CEO
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
140
160
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO
160
—
6
5
4
1
2
3
SOT-363/SC-88
C₂
B₁
E₁
E₂
B₂
C₁
Unit
Vdc
Collector–Base Breakdown Voltage
(I C = 100 µAdc, I E = 0)
V(BR)CBO
180
—
Vdc
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 120Vdc, I E = 0)
V (BR)EBO
6.0
—
Vdc
I CBO
—
50
nAdc
( V CB = 120Vdc, I E = 0, T A=100 °C)
—
50
µAdc
Emitter Cutoff Current
I EBO
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
—
50
nAdc
http://www.twtysemi.com
[e-mail]
4008-318-123
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