L8550HQLT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors NPN Silicon

General Purpose Transistors
NPN TY
FEATURE
ƽHigh current capacity in compact package.
I_C =1.5A.
ƽEpitaxial planar type.
ƽNPN complement: L8050H
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550HPLT1
1HB
3000/Tape&Reel
L8550HPLT1G
1HB
(Pb-Free)
3000/Tape&Reel
L8550HQLT1
1HD
3000/Tape&Reel
L8550HQLT1G
1HD
(Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
1500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Symbol
PD
R θJ A
P_D
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
R θJ A
Tj,T Stg
417
-55 to +150
°C/W
°C
Product specification
L8550H*LT1
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 3