KW306 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Silicon MOSFET High Speed Switching

SSMMDD TTyyppee
Features
High density mounting is possible because of the complex type
which holds low-on-resistance,very-high-speed-switching
and 4-volt-drive N-/P-channel/ MOSFETS
Low ON-state resistance
TransistIIoCICICCrs
Product specification
KW306
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse) *1
Allowable power Dissipation *2
Total Dissipation *2
Channel Temperature
Storage Temperature
Symbol
N-Channel
P-Channel
Unit
VDSS
30
30
V
VGSS
25
25
V
ID
3
A
IDP
32
-32
A
PD
1.7
W
PT
2.0
W
Tch
150
Tstg
-55 to 150
*1 PW 10 S, dutycycle 1%
*2 Mounted on ceramic board (1000mm² X 0.8mm) 1unit
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