KVN4525E6 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 250V N-Channel Enhancement Mode MOSFET

SMD Type
Features
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
TraMnOsiSsFtIoECrTs
Product specification
KVN4525E6
Unit: mm
1 pin mark
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (VGS=10V; TA=25 )*1
(VGS=10V; TA=70 )*1
Pulsed Drain Current *3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25 *1
Linear Derating Factor
Operating and Storage Temperature Range
Junction to Ambient*1
Junction to Ambient*2
Symbol
VDSS
VGS
ID
ID
IDM
IS
ISM
PD
Tj:Tstg
R JA
R JA
Rating
250
40
230
183
1.1
1.44
1.1
8.8
-55 to +150
113
65
Unit
V
V
mA
mA
A
A
A
W
mW/
/W
/W
*1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of
single sided 1oz copper, in still air conditions
*2 For a device surface mounted on FR4 PCB measured at t 5 secs.
*3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2