KTS1C1S250 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Mesh Overlay Power MOSFET

SSMMDD TTyyppee
Features
Typical RDS(on) (N-Channel)=0.9
Typical RDS(on) (N-Channel)=2.1
Gate-source zener diode
Standard outline for easy
automated surface mount assembly
TransistIIoCICICCrs
Product specification
KTS1C1S250
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k )
Gate-to-Source Voltage
Continuous Drain Current, @ Tc = 25
Continuous Drain Current, @ Tc = 100
Pulsed Drain Current
Total Dissipation at TC = 25 Single Operation
Total Dissipation at TC = 25 Dual Operation
Junction and Storage Temperature Range
Thermal Resistance Junction-ambient Max (Single Operating)
(Dual Operating)
* Mounted on 0.5 in²pad of 2oz. copper.
Symbol
VDS
VDGR
VGS
ID
ID
IDM
PTOT
TJ, TSTG
Rthj-amb *
N-Channel
P-Channel
250
250
250
250
25
0.75
0.60
0.47
0.38
3
2.4
1.6
2
-65 to 150
62.5
78
Unit
V
V
A
W
/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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