KTD998 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER)

Product specification
TO-3P Plastic-Encapsulate Transistors
KTD998 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z High Current and Power Capability
z High Power Amplifier Application
TO – 3P
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
120
5
10
3
42
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
C_ob
f_T
Test conditions
I_C=100µA,I_E=0
I_C=50mA,I_B=0
I_E=100µA,I_C=0
V_CB=120V,I_E=0
V_EB=5V,I_C=0
V_CE=5V, I_C=1A
I_C=5A,I_B=500mA
V_CE=5V, I_C=5A
V_CB=10V,I_E=0, f=1MHz
VCE=5V,IC=1A
Min Typ Max Unit
120
V
120
V
5
V
10
μA
10
μA
55
160
2.5
V
1.5
V
170
pF
12
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
R
55-110
O
80-160
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