KTD2017 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Silicon MOSFET

SMD Type
Features
Low ON resistance.
2.5V drive.
Mounting height 1.1mm
Composite type, facilitating high-density mounting.
ICIC
Product specification
KTD2017
TSSOP-8
Unit: mm
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
10
V
Drain Current(DC)
ID
5
A
Drain Current (pulse)
(PW 10ìs)
IDP
20
A
Allowable Power Dissipation
PD
0.8
W
Total Dissipation
PT
1.3
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
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