KTD1898 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

■ Features
● Collector Power Dissipation: PC=500mW
● Collector Current: IC=1A
Product specification
KTD1898
SOT-89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
123
0.48±0.1
0.53±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
100
80
5
1
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition frequency
Collector Output Capacitance
Symbol
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditons
IC=1mA, IB=0
VCB=80V, IE=0
VEB=4V, IC=0
VCE=3V, IC=500mA
IC=500mA, IB=20mA
VCE=10V, IC=10mA
VCB=10V, IE=0, f=1MHz
■ hFE Classification
Marking
Rank
hFE
ZO
O
70～140
ZR
R
120～240
ZGR
GR
200～400
Unit
V
V
V
A
mW
℃
℃
Min Typ Max Unit
80
V
1 μA
1 μA
70
400
0.4 V
100
MHz
20
pF
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