KTD1351 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

Product specification
TO-220-3L Plastic-Encapsulate Transistors
KTD1351 TRANSISTOR (NPN)
FEATURES
z Low Saturations Voltage
APPLICATIONS
z General Purpose Applications
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
60
7
3
2
63
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
C_ob
f_T
Test conditions
I_C=100µA,I_E=0
I_C=50mA,I_B=0
I_E=100µA,I_C=0
V_CB=60V,I_E=0
V_EB=7V,I_C=0
V_CE=5V, I_C=0.5A
I_C=2A,I_B=0.2A
V_CE=5V, I_C=0.5A
V_CB=10V,I_E=0, f=1MHz
VCE=5V,IC=0.5A
Min Typ Max Unit
60
V
60
V
7
V
0.1
mA
0.1
mA
60
300
1
V
1
V
35
pF
3
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
O
60-120
Y
100-200
GR
150-300
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