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| KTD1304 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING) | |||
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Product specification
SOT-23 Plastic-Encapsulate Transistors
KTD1304 TRANSISTOR (NPN)
SOT-23
FEATURES
·High emitter-base voltage
·low on resistance
MARKING: MAX
1. BASE
2. EMITTER
3.COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current -Continuous
0.3
A
PC
Collector Power Dissipation
0.2
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
output capacitance
On resistance
Symbol
Test conditions
Min Typ
V(BR)CBO IC=100μA, IE=0
25
V(BR)CEO IC=1mA, IB=0
20
V(BR)EBO
IE=100μA, IC=0
12
ICBO
VCB=25 V, IE=0
IEBO
VEB=12V, IC=0
hFE(FOR)
VCE=2V, IC=4 mA
200
hFE(REV)
VCE= 2V, IC= 4mA
20
VCE(sat)
IC= 100mA, IB=10 mA
VBE(sat)
IC= 100mA, IB=10mA
VCE=10V, IC= 1mA
fT
f=100MHz
60
Cob
VCB=10V,IE=0,f=1MHz
10
R(on)
Vin=0.3V,IB=1mA,f=1KHZ
0.6
Max Unit
V
V
V
0.1 μA
0.1 μA
1000
0.25 V
1
V
MHz
pF
Ω
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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