KTD1302 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING)

■ Features
● Collector Power Dissipation: PC=500mW
● Collector Current: IC=300mA
Product specification
KTD1302
SOT-89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
123
0.48±0.1
0.53±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
25
25
12
300
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Symbol
ICBO
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
Collector Output Capacitance
VCE(sat)
VBE(sat)
fT
Cob
Test conditons
VCB=25V, IE=0
VEB=12V, IC=0
VCE=2V, IC=4mA
VCE=2V, IC=4mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
■ Marking
Marking
BJ
Unit
V
V
V
mA
mW
℃
℃
Min Typ Max Unit
100 nA
100 nA
200
800
20
0.25 V
1.0 V
60
MHz
10
pF
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