KTC601U Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SMD Type
■ Features
● Power dissipation: PC=200mW
● Collector Curren: IC=150mA
Q1
Q2
TransistIoCrs
Product specification
KTC601U
SOT-353
1.3+0.1
-0.1
0.65
Unit: mm
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation(TOTAL)
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5.0
V
IC
150
mA
PC
200
mW
Tj
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
Symbol
Test conditions
V(BR)CBO Ic= 100μA, IE=0
V(BR)CEO Ic= 1 mA， IB=0
V(BR)EBO IE= 100 μA， IC=0
IcBO VCB= 60 V , IE=0
IEBO VCE= 5.0V , IC=0
hFE VCE= 6V, IC= 2.0mA
VCE(sat) IC=100mA, IB= 10mA
fT VCE= 10V, IC= 1mA,f=100MHz
Cob VCB=10V, IE=0, f=1MHz
NF VCE=6V, IC=0.1mA, f=1KHz , Rg=10KΩ
Min Typ Max Unit
60
V
50
V
5.0
V
0.1 μA
0.1 μA
120
400
0.25 V
80
MHz
3.5 pF
1 10 dB
■ hFE Classification
Marking
LY
Rank
Y
Range
120～240
LGR
GR
200～400
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