KTC4377 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (STROBO FLASH, HIGH CURRENT)

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Product specification
KTC4377
■ Features
● Collector Power Dissipation: PC=500mW
● Collector Current: IC=2A
SOT-89
4.50±0.1
1.80±0.1
123
0.48±0.1
0.53±0.1
Unit:mm
1.50 ±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
30
10
6
2
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition frequency
Collector Output Capacitance
VCE(sat)
VBE
fT
Cob
Test conditons
IC= 1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=30V, IE=0
VEB=6V, IC=0
VCE=1V, IC=500mA
VCE=1V, IC=2A
IC=2A, IB=50mA
VCE=1V, IC=2A
VCE=1V, IC=500mA
VCB=10V, IE=0, f=1MHz
■ hFE Classification
Marking
Rank
hFE
SA
A
140～240
SB
B
200～330
SC
C
300～450
SD
D
420～600
Unit
V
V
V
A
mW
℃
℃
Min Typ Max Unit
30
V
10
V
6
V
100 nA
100 nA
140
600
70 140
0.5 V
1.5 V
150
MHz
27
pF
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