KTC4376 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

SSMMDD TTyyppee
■ Features
● Collector Power Dissipation: PC=500mW
● Collector Current: IC=800mA
TTrraannDssiiissottdIIooCCerrss
Product specification
KTC4376
SOT-89
4.50±0.1
1.80±0.1
123
0.48±0.1
0.53±0.1
Unit:mm
1.50 ±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
35
30
5
800
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition frequency
Collector Output Capacitance
VCE(sat)
VBE
fT
Cob
Test conditons
IC= 1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=700mA
IC=500mA, IB=20mA
VCE=1V, IC=10mA
VCE=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
■ hFE Classification
Marking
Rank
Range
PO
O
100～200
PY
Y
160～320
Unit
V
V
V
mA
mW
℃
℃
Min Typ Max Unit
35
V
30
V
5
V
100 nA
100 nA
100
320
35
0.5 V
0.8 V
120
MHz
13
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1