KTC4375 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

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■ Features
● Collector Power Dissipation: PC=500mW
● Collector Current: IC=1.5A
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Product specification
KTC4375
SOT-89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
123
0.48±0.1
0.53±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector-base voltage
VCBO
Collector-Emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector Current
IC
PC
Collector Power Dissipation
PC *
Junction Temperature
Tj
Storage Temperature Range
Tstg
* : KTC4375 mounted on ceramic substrate (250mm²x0.8t)
■ Electrical Characteristics Ta = 25℃
Rating
30
30
5
1.5
500
1
150
-55 to 150
Parameter
Collector-base breakdown voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition frequency
Collector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Testconditons
IC= 1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
IC=1.5A, IB=0.03A
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
■ hFE Classification
Marking
Rank
hFE
GO
O
100～200
GY
Y
160～320
Unit
V
V
V
A
mW
W
℃
℃
Min Typ Max Unit
30
V
30
V
5
V
100 nA
100 nA
100
320
2.0 V
1.0 V
120
MHz
40 pF
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