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| KTC4369 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) | |||
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Product specification
TO-220F Plastic-Encapsulate Transistors
KTC4369 TRANSISTOR (NPN)
FEATURES
z High Transition Frequency
z Good Linearity of hFE
z General Purpose Application
TO â 220F
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
30
5
3
2
62.5
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
fT
Test conditions
IC=100µA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
VCB=20V,IE=0
VEB=5V,IC=0
VCE=2V, IC=500mA
VCE=2V, IC=2.5A
IC=2A,IB=0.2A
VCE=2V, IC=500mA
VCB=10V,IE=0, f=1MHz
VCE=2V,IC=500mA
Min Typ Max Unit
30
V
30
V
5
V
1
μA
1
μA
70
240
25
0.8
V
1
V
35
pF
100
MHz
CLASSIFICATION OF hFE (1)
RANK
RANGE
O
70-140
Y
120-240
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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