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| KTC4077 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER) | |||
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Product specification
SOT-323 Plastic-Encapsulate Transistors
KTC4077 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
z Complementary to KTA2017
z High Voltage
z Excellent hFE Linearity
z Low Noise
APPLICATIONS
z General Purpose Amplification
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
120
VCEO Collector-Emitter Voltage
120
VEBO Emitter-Base Voltage
5
IC
Collector Current
100
IB
Base Current
20
PC
Collector Power Dissipation
100
RÎJA Thermal Resistance from Junction to Ambient
1250
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mA
mW
â/W
â
â
SOTâ323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise Figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
NF
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=120V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=10mA, IB=1mA
VCE=6V, IC=1mA
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=0.1mA,f=1kHz,
Rg=10kâ¦
Min
Typ
Max Unit
120
V
120
V
5
V
100
nA
100
nA
200
700
0.3
V
100
MHz
4
pF
10
dB
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
GR
200-400
DGR
BL
350-700
DBL
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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