KTC3880 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER)

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Product specification
KTC3880
■ Features
● Collector Power Dissipation: PC=150mW
● Collector Current: IC=20mA
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
40
V
VCEO
30
V
VEBO
4
V
IC
20
mA
PC
150
mW
Tj
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector output capacitance
Collector-Base Time Constant
Noise Figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
fT
Cob
Cc.rbb
NF
Test conditons
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=18V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCB=6V, IE=0, f=1MHz
VCE=6V,IE=-1mA,f=30MHz
VCE=6V,IC=1mA,f=100MHz
■ hFE Classification
Marking
Rank
hFE
AQR
R
40～80
AQO
O
70～140
AQY
Y
100～200
Min Typ Max Unit
40
30
4
0.5 μA
0.5 μA
40
200
500
MHz
1
pF
30 ps
5.0 dB
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