KTC3265 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER,POWER SWITCHING)

Product specification
SOT-23 Plastic-Encapsulate Transistors
KTC3265 TRANSISTOR (NPN)
FEATURES
z High DC current gain
z Complementary to KTA1298
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
800
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h_FE
Rank
Range
Marking
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_C= 100μA, I_E=0
I_C= 10mA, I_B=0
I_E=100μA, I_C=0
I_CBO
V_CB=30 V, I_E=0
I_EBO
V_EB=5 V, I_C=0
h_FE
V_CE=1V, I_C= 100mA
V_CE(sat)
I_C=500mA, I_B=20mA
V_BE
V_CE=1V,I_C=10mA
V_CE=5V, I_C=10mA
f_T
f=100MHz
C_ob
V_CB=10V,I_E=0,f=1MH_Z
O
100-200
EO
Min Typ
35
30
5
100
0.5
120
13
Y
160-320
EY
Max
0.1
0.1
320
0.5
0.8
Unit
V
V
V
μA
μA
V
V
MHz
pF
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